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FBM is replacing DRAM

DRAM has long been the main type of RAM. Although this technology has a glorious history spanning more than one decade, according to experts, its use is nearing its end. The reason is simple – it is impossible to reduce the size of a memory cell indefinitely. There comes a time when fundamental changes need to be made to it.

DRAM developers, like city planners, have embraced a vertical direction of development: the proportions of capacitors in DRAM cells have changed over time so that they more and more resemble multi-story buildings. Now that capacitors are more like skyscrapers than flat structures, cost-effective ways to further miniaturize are unknown. It is assumed that the transition to less than 40 nm standards will coincide with the emergence of a new type of memory, which will open up opportunities for further increasing storage density.

The technology, which is called the likely successor to DRAM, is known as floating body memory (FBM). The key feature of the FBM is the absence of a capacitor in the memory cell.

How does such a cell work?? In FBM, the state of the cell is stored directly in the region of the electrically isolated “body” of the transistor. To form such transistors, it is necessary to use SOI (“silicon on insulator”) technology, but in the coming years, as the industry moves to the production of bulk transistors, such as FinFETs, many, if not all technological processes will cost on the use of SOI substrates.

The absence of a capacitor not only allows for smaller cell sizes, but also reduces production costs. Manufacturing DRAM capacitors requires additional process steps, which are approximately 20% of the cost of manufacturing a wafer with DRAM chips. In addition, the presence of capacitors will reduce the percentage of product yield.

While the ultimate fate of DRAM has yet to be decided, the future of FBM looks promising, the source concludes.

Source: EE Times

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