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IBM builds world’s smallest 22nm SRAM cell
IBM and its development partners – AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) – announced the creation of the world’s first workable static random access memory (SRAM) cell, made at 22 nm.
The memory was manufactured in an IBM pilot plant operating with 300mm platters.
Manufacturing SRAM is a step ahead of more sophisticated devices such as microprocessors. 22nm SRAM cell is built according to the standard circuit with six transistors. Cell area – 0.1 sq.micron. SRAM cell size is a key benchmark in the semiconductor industry, so IBM and partners have proven their leadership in technology adoption.
Recall that 45 nm standards are now used in advanced mass production. The next step should be mastering 32 nm standards. In other words, IBM is two generations ahead of today’s mass production.