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According to MIT experts, optical lithography will allow reaching 12 nm standards
Optical lithography can be used in the production of semiconductor chips at 12 nm, according to researchers at the Massachusetts Institute of Technology (MIT). So far, they have been able to demonstrate the possibility of forming lines with a thickness of 25 nm using a development called sweep interference lithography.
Scientists believe that the same technology will allow work with a resolution of at least 12 nm. According to them, as we go further, the main limiting factors are the roughness of the materials and the inability to observe such small structures.
Interference lithography uses two lasers with different operating frequencies. Due to their interference, a diffraction pattern is formed with a much higher resolution than any of the lasers alone provides. Limitations not related to optical factors limit the use of interference lithography to photoresist verification processes, rather than to the actual formation of electronic circuit elements on the wafer surface.
By adding the ability to scan or scan, scientists expect to make interference lithography a commercially applicable technology for the production of chips at 25 nm or less.
In conventional lithography, the semiconductor plate remains stationary, while in interference lithography it moves all the time. Unfortunately, moving the plate relative to the lasers leads to a Doppler frequency shift. This causes irregularities in the diffraction pattern, which prevents the practical application of the technology. According to researchers from MIT, the problem was solved by acting on the plate with ultrasonic waves at a frequency of 100 MHz, which compensate for the unwanted effect.
The commercialization of the development will be carried out by the Plymouth Grating Laboratory, created by the project leader.
Sources: EE Times, Plymouth Grating Laboratory, MIT