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The development of MetaRAM will increase the memory capacity in systems based on the Intel platform
MetaRAM, which does not have its own production, focuses on improving RAM. In this field, she managed to achieve some success. At the IDF event, the company presented its development called DDR3 MetaSDRAM. This technology is said to double the amount of DDR3 memory in future Intel servers and workstations while maintaining high clock speeds, achieving the world’s best memory capacity per channel.
The development of MetaRAM was mentioned in an address by Intel CEO Patrick Gelsinger; The Intel program on the forum includes a showcase of the world’s largest 2-rank registered memory modules (R-DIMM) with a capacity of 16 GB and 144 GB systems with DDR3 MetaSDRAM by Hynix Semiconductor.
It is important that MetaSDRAM specialists have created a solution that does not require modification of the system itself. It can help narrow the gap between the growing processing power of the processor, which, according to the source, is doubling every 18 months, and the capacity of DRAM, which only doubles every three years. Previously, an increase in the amount of memory was possible only in one way – by increasing the density of modules, and, as you know, the most capacious and new modules cost disproportionately more than the mass ones.
The MetaSDRAM chipset, which plugs between the memory controller and DRAM, solves the memory capacity issue by allowing four times as many DRAM components to fit on a single DIMM. At the same time, no alterations of the hardware or software part of the system are required. From the point of view of the system, the novelty looks like a regular memory of an increased size.
MetaRAM DDR3 MetaSDRAM Chipset Available in 4GB, 8GB and 16GB Memory Options. All three options allow you to create JEDEC compliant R-DIMMs. The first two are designed to work with bus frequencies up to 1333 MHz, the last – up to 1066 MHz.